rclamp3324p final datasheet rev 6.1 revision date october 4, 2016 1 of 8 semtech protection products features ? transient protection to ? iec 61000-4-2 (esd) 20kv (air), 17kv (contact) ? iec 61000-4-4 (eft) 4kv (5/50ns) ? iec 61000-4-5 (lightning) 4.5a (8/20s) ? package design optimized for high speed layout ? protects four high-speed data lines ? working voltage: 3.3v ? low capacitance: 0.65 pf maximum (i/o to gnd) ? dynamic resistance: 0.15 ohms (typ) ? solid-state silicon-avalanche technology mechanical characteristics ? sgp2510p8 package ? pb-free, halogen free, rohs/weee compliant ? nominal dimensions: 2.5 x 1.0 x 0.60 mm ? lead finish: nipdau ? molding compound flammability rating: ul 94v-0 ? marking : marking code + date code ? packaging : tape and reel applications ? usb 3.0 ? industrial equipment ? digital visual interface ? lvds interfaces ? esata rclamp3324p low capacitance railclamp? 4-line surge and esd protection description railclamp? 3324p provides esd protection for high- speed data interfaces. it features a high maximum esd withstand voltage of 17kv contact and 20kv air discharge per iec 61000-4-2. rclamp3324p is designed to minimize both the esd peak clamping and the tlp clamping. package inductance is reduced at each pin resulting in lower peak esd clamping voltage. the dynamic resistance is among the industrys lowest at 0.15 ohms (typical). maximum capacitance on each line to ground is 0.65pf allowing the rclamp3324p to be used in applications operating in excess of 5ghz without signal attenuation. each device will protect up to four lines (two high-speed pairs). rclamp3324p is in a 10-pin sgp2510p8 package measuring 2.5 x 1.0mm with a nominal height of 0.60mm. the leads have a nominal pin-to-pin pitch of 0.50mm. flow- through package design simplifes pcb layout and maintains signal integrity on high-speed lines. the combination of low peak esd clamping, low dynamic resistance, and innovative package design enables this device to provide the highest level of esd protection for applications such as usb 3.0, esata, and displayport. 2.50 1.00 0.50 bsc 12 0.60 nominal dimension functional schematic device schematic nominal dimensions in mm www.semtech.com
rclamp3324p final datasheet rev 6.1 revision date october 4, 2016 2 of 8 semtech absolute maximum rating rating symbol value units peak pulse current (tp = 8/20s) i pp 4.5 a esd per iec 61000-4-2 (contact) (1) esd per iec 61000-4-2 (air) (1) v esd 17 20 kv operating temperature t j -40 to +125 o c storage temperature t stg -55 to +150 o c electrical characteristics (t=25 o c unless otherwise specifed) parameter symbol conditions min. typ. max. units reverse stand-of voltage v rwm -40 o c to 125 o c any i/o pin to gnd 3.3 v trigger voltage v trig tp = 0.2/100ns (tlp) any i/o pin to gnd 8 v reverse leakage current i r v rwm = 3.3v t = 25 o c 0.01 0.05 a t = 125 o c 0.150 a clamping voltage (2) v c i pp = 1a, tp = 8/20s, any i/o pin to gnd 2.5 3.5 v clamping voltage (2) v c i pp = 4.5a, tp = 8/20s, any i/o pin to gnd 3.5 4.5 v esd clamping voltage (3) v c i pp = 4a, tp = 0.2/100ns (tlp) any i/o pin to gnd 3.5 v esd clamping voltage (3) v c i pp = 16a, tp = 0.2/100ns (tlp) any i/o pin to gnd 5.3 v dynamic resistance (3), (4) r dyn tp = 0.2/100ns (tlp) any i/o pin to gnd 0.15 ohms junction capacitance c j v r = 0v, f = 1mhz any i/o pin to gnd 0.60 0.65 pf v r = 0v, f = 1mhz between i/o pins 0.30 0.40 pf notes: (1): esd gun return path to ground reference plane (grp) (2): measured using an 8/20us constant current source. (3): transmission line pulse test (tlp) settings: tp = 100ns, tr = 0.2ns, i tlp and v tlp averaging window: t 1 = 70ns to t 2 = 90ns. (4): dynamic resistance calculated from i tlp = 4a to i tlp = 16a www.semtech.com
rclamp3324p final datasheet rev 6.1 revision date october 4, 2016 3 of 8 semtech typical characteristics esd clamping (+8kv contact per iec 61000-4-2) esd clamping (-8kv contact per iec 61000-4-2) tlp curve (positive pulse) clamping voltage vs. peak pulse current (tp=8/20us) \5 0 5 10 15 20 25 30 024681 0 tlp current (a) dut voltage (v) transmission ? line ? pulse ? test (tlp) ? settings: tp ? =? 100ns, ? tr ? =? 0.2ns, i tlp and ? v tlp averaging ? window: t 1 =? 70ns ? to ? t 2 =? 90ns 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0123456 peak ? clamping ? voltage ?\ v c (v) peak ? pulse ? current ?\ i pp (a) rc3324p_ar_8_20 surge t a =? 25 o c tp ? =? 8x20us any ? i/o ? to ? gnd \30 \25 \20 \15 \10 \5 0 \6 \5 \4 \3 \2 \ 10 tlp current (a) dut voltage (v) transmission ? line ? pulse ? test (tlp) ? settings: tp ? =? 100ns, ? tr ? =? 0.2ns, i tlp and ? v tlp averaging ? window: t 1 =? 70ns ? to ? t 2 =? 90ns 0 1 2 3 4 5 6 7 8 0 20 40 60 80 100 120 140 leakage ? current ?\ i r (na) temperature ? ( o c) rc3324p_ar_ir vr = ? 3.3v clamping voltage - v c (v) time (ns) measured with 50 ohm scope input impedance, 2ghz bandwidth. corrected for 50 ohm, 20db attenuator. esd gun return path connected to esd ground plane. -70 -60 -50 -40 -30 -20 -10 0 10 20 -10 0 10 20 30 40 50 60 70 80 90 clamping voltage - v c (v) time (ns) measured with 50 ohm scope input impedance, 2ghz bandwidth. corrected for 50 ohm, 20db attenuator. esd gun return path connected to esd ground plane. tlp curve (negative pulse) reverse leakage current (i r ) vs. temperature www.semtech.com
rclamp3324p final datasheet rev 6.1 revision date october 4, 2016 4 of 8 semtech typical characteristics (continued) capacitance vs. reverse voltage capacitance vs. temperature insertion loss - s21 analog crosstalk -80 -70 -60 -50 -40 -30 -20 -10 0 10 100 1000 10000 insertion loss - il (db) frequency (mhz) -10 -9 -8 -7 -6 -5 -4 -3 -2 -1 0 0 1 10 insertion loss - il (db) frequency (ghz) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 00.511.522.533.5 junction ? capacitance ?\ c j (pf) voltage ? (v) cj ? line ? to ? gnd cj ? line ? to ? line rc33_ar_cj f ? =? 1mhz rc3324p_ar_cj rc3324p_ar_cj 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 -75 -50 -25 0 25 50 75 100 125 150 junction capacitance - c j (pf) temperature ( o c) f = 1mhz vr = 0v between any i/o and gnd www.semtech.com
rclamp3324p final datasheet rev 6.1 revision date october 4, 2016 5 of 8 semtech application information figure 2 - trace routing figure 1 - usb 3.0 type-a protection example usb 3.0 - type a host connector rclamp0512tq rclamp3324p vbus d- d+ sstx+ sstx- ssrx+ ssrx- gnd gnd via to ground landing pad device outline trace uclamp0571p trace land pattern device via line 1 in line 1 out to ic line 2 in line 3 in line 4 in line 2 out to ic line 3 out to ic line 4 out to ic ground 1 rclamp0512tq is be used to protect d+ and d- lines. these lines are routed through rclamp0512tq at pin1 and pin 2. pin 3 is connected to the ground plane. rclamp0512tq is qualifed to aec-q100. additional information may be found on the device data sheet. single line devices such as uclamp0571p are recom - mended for surge and esd protection of the vbus line. this device features high surge and esd capability and may be used on 5v power rails. in power delivery (pd) applications, higher working voltage tvs device may be needed. options exist for esd and surge protection up to 24v. device placement placement of the protection component is a critical ele - ment for efective esd suppression. tvs diodes should be placed as close to the connector as possible. this helps reduce transient coupling to nearby traces. ground connections should be made directly to the ground plane using micro-vias. this reduces parasitic inductance in the ground path and minimizes the clamp - ing voltage seen by the protected device. usb interface protection for usb 3.0 applications, rclamp3324p is recommended for protecting the 5gb/s superspeed line pairs. fig - ure 1 below shows an example of protecting a usb 3.0 type-a interfaces (host side shown). lines are routed through each device entering at pins 1, 2, 4, and 5 and exiting at pins 10, 9, 7, and 6 respectively (figure 2). each trace should run under the device and connect the pins together. ground connection is made at the center tabs (pins 3, and 8 ). traces should be kept the same length to avoid impedance mismatch. the diferential imped - ance of each pair can be controlled for usb 3.0 (85 ohms +/-15%) while maintaining a minimum trace-to-trace and trace-to-pad spacing. individual pcb design constraints may necessitate diferent spacing or trace width. both ground pads should be connected for optimal perfor - mance. ground connection is made using flled via-in- pad. www.semtech.com
rclamp3324p final datasheet rev 6.1 revision date october 4, 2016 6 of 8 semtech outline drawing - sgp2510p8 land pattern - sgp2510p8 e a aaa c b c e bbb cab bbb c ab a1 bxn 2xb1 d/2 (0.025-0.075) lxn e/2 b bbb aaa n l e d dim a1 a 0.25 0.15 0.20 0.38 0.28 0.08 0.10 8 0.33 2.50 0.50 bsc millimeters max 0.05 0.63 dimensions min 0.00 nom 0.57 0.03 0.60 controlling dimensions are in millimeters (angles in degrees). notes: 1. 1.00 e 2.575 2.45 0.95 1.075 d pin 1 indicator (laser mark) seating plane b1 0.35 0.40 0.45 a 12 n 2x 0.075 7 places r0.125 this land pattern is for reference purposes only. consult your manufacturing group to ensure your notes: 2. company's manufacturing guidelines are met. controlling dimensions are in millimeters (angles in degrees). 1. dim x y p g c millimeters (0.825) 0.20 0.625 0.50 0.20 dimensions 1.45 z x1 0.40 x1 x y g (c) z p www.semtech.com
rclamp3324p final datasheet rev 6.1 revision date october 4, 2016 7 of 8 semtech marking code 3324p yyww tape and reel specifcation ordering information part number qty per reel pocket pitch reel size rclamp3324p.tct 3,000 4mm 7 rclamp3324p.tnt 10,000 2mm 7 railclamp and rclamp are registered trademarks of semtech corporation notes: dot indicates pin 1 location device orientation in tape carrier tape, 4mm pitch option carrier tape, 2mm pitch option 3324p yyww pin 1 location (towards sprocket holes) 3324p yyww 3324p yyww 3324p yyww www.semtech.com
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